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MJ13335 View Datasheet(PDF) - Inchange Semiconductor

Part NameDescriptionManufacturer
MJ13335 Silicon NPN Power Transistor Iscsemi
Inchange Semiconductor Iscsemi
MJ13335 Datasheet PDF : 2 Pages
1 2
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJ13335
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=100mA ; IB=0
500
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 10A; IB=2A
IC= 10A; IB=2A,TC=100
VCE(sat)-2
VBE(sat)
ICEV
ICER
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
IC= 20A; IB=6.7A
IC= 10A; IB= 2A
IC= 10A; IB= 2A,TC=100
VCEV=500V;VBE(off)=1.5V
VCEV=500V;VBE(off)=1.5V;TC=150
VCE= 500V; RBE= 50Ω,TC= 100
V
1.8
2.4
V
5
V
1.8
1.8
V
0.25
5.0
mA
5.0 mA
IEBO
Emitter Cutoff Current
VEB= 6V; IC=0
1 mA
hFE
DC Current Gain
IC= 5A ; VCE= 5V
10
60
fT
Current Gain-Bandwidth Product
COB
Output Capacitance
Switching times;Resistive Load
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
IC= 0.3A ;VCE= 10V; ftest=1MHz
IE= 0; VCB= 10V; ftest=1kHz
IC= 10A , VCC= 250V; IB1=2A
VBE(off)= 5V; tp= 10μs;
Duty Cycle2.0%
5
40 MHz
125
500 pF
0.02 0.1 μs
0.3 0.7 μs
1.6 4.0 μs
0.3 0.7 μs
isc Websitewww.iscsemi.cn
2
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