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MJ21195 View Datasheet(PDF) - ON Semiconductor

Part Name
Description
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MJ21195
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MJ21195 Datasheet PDF : 0 Pages
MJ21195 − PNP MJ21196 − NPN
ELECTRICAL CHARACTERISTICS (TC = 25°C ± 5°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
Collector Cutoff Current
(VCE = 200 Vdc, IB = 0)
Emitter Cutoff Current
(VCE = 5 Vdc, IC = 0)
Collector Cutoff Current
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
VCEO(sus)
ICEO
IEBO
ICEX
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non−repetitive)
(VCE = 80 Vdc, t = 1 s (non−repetitive)
ON CHARACTERISTICS
DC Current Gain
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, VCE = 5 Vdc)
Base−Emitter On Voltage
(IC = 8 Adc, VCE = 5 Vdc)
Collector−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS
(Matched pair hFE = 50 @ 5 A/5 V)
hFE
unmatched
hFE
matched
IS/b
hFE
VBE(on)
VCE(sat)
THD
Current Gain Bandwidth Product
fT
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
Output Capacitance
Cob
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%
Min Typical Max
250
100
100
100
5
2.5
75
25
8
2.2
1.4
4
0.8
0.08
4
500
Unit
Vdc
mAdc
mAdc
mAdc
Adc
Vdc
Vdc
%
MHz
pF
PNP MJ21195
6.5
6.0
VCE = 10 V
5.5
5.0
5V
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0 TJ = 25°C
0.5 ftest = 1 MHz
0
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain Bandwidth Product
NPN MJ21196
7.5
7.0
6.5
6.0
5.5
5.0
10 V
4.5
4.0
VCE = 5 V
3.5
3.0
2.5
2.0 TJ = 25°C
1.5 ftest = 1 MHz
1.0
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
Figure 2. Typical Current Gain Bandwidth Product
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