datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

MJ11030G View Datasheet(PDF) - ON Semiconductor

Part Name
Description
View to exact match
MJ11030G Datasheet PDF : 2 Pages
1 2
MJ11028, MJ11030, MJ11032 (NPN)
PNP
MJ11029
MJ11033
BASE
COLLECTOR
NPN
MJ11028
MJ11030
MJ11032
BASE
COLLECTOR
3.0 k 25
3.0 k 25
EMITTER
Figure 1. Darlington Circuit Schematic
EMITTER
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 1)
(IC = 1 00 mAdc, IB = 0)
MJ11028, MJ11029
MJ11030
MJ11032, MJ11033
CollectorEmitter Leakage Current
(VCE = 60 Vdc, RBE = 1 kW)
(VCE = 90 Vdc, RBE = 1 kW)
(VCE = 120 Vdc, RBE = 1 kW)
(VCE = 60 Vdc, RBE = 1 kW, TC = 150_C)
(VCE = 120 Vdc, RBE = 1 kW, TC = 150_C)
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
CollectorEmitter Leakage Current
(VCE = 50 Vdc, IB = 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 25 Adc, VCE = 5 Vdc)
(IC = 50 Adc, VCE = 5 Vdc)
CollectorEmitter Saturation Voltage
(IC = 25 Adc, IB = 250 mAdc)
(IC = 50 Adc, IB = 500 mAdc)
BaseEmitter Saturation Voltage
(IC = 25 Adc, IB = 200 mAdc)
(IC = 50 Adc, IB = 300 mAdc)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
MJ11028, MJ11029
MJ11030
MJ11032, MJ11033
MJ11028, MJ11029
MJ11032, MJ11033
Symbol
V(BR)CEO
ICER
IEBO
ICEO
hFE
VCE(sat)
VBE(sat)
Min
Max
Unit
60
Vdc
90
120
mAdc
2
2
2
10
10
mAdc
5
mAdc
2
1k
18 k
400
Vdc
2.5
3.5
Vdc
3.0
4.5
http://onsemi.com
2
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]