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BCX52-10(2001) View Datasheet(PDF) - Central Semiconductor

Part Name
Description
View to exact match
BCX52-10
(Rev.:2001)
Central-Semiconductor
Central Semiconductor Central-Semiconductor
BCX52-10 Datasheet PDF : 2 Pages
1 2
BCX51
BCX52
BCX53
SURFACE MOUNT
PNP SILICON TRANSISTOR
CentralTM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCX51,
BCX52, and BCX53 types are PNP Silicon
Transistors manufactured by the epitaxial planar
process, epoxy molded in a surface mount
package, designed for high current general
purpose amplifier applications.
SOT-89 CASE
MAXIMUM RATINGS (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Base Current
Peak Base Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
PD
TJ,Tstg
ΘJA
BCX51
45
45
BCX52
60
60
5.0
1.0
1.5
100
200
1.2
-65 to +150
104
BCX53
100
80
UNITS
V
V
V
A
A
mA
mA
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN TYP
ICBO
VCB=30V
ICBO
VCB=30V, TA=125°C
IEBO
VEB=5.0V
BVCBO
IC=100µA (BCX51)
45
BVCBO
IC=100µA (BCX52)
60
BVCBO
IC=100µA (BCX53)
100
BVCEO
IC=10mA (BCX51)
45
BVCEO
IC=10mA (BCX52)
60
BVCEO
IC=10mA (BCX53)
80
VCE(SAT)
IC=500mA, IB=50mA
VBE(ON)
VCE=2.0V, IB=500mA
hFE
VCE=2.0V, IC=5.0mA
63
hFE
VCE=2.0V, IC=150mA
63
hFE
VCE=2.0V, IC=150mA
(BCX51-10, BCX52-10, BCX53-10)
63
hFE
VCE=2.0V, IC=150mA
(BCX51-16, BCX52-16, BCX53-16)
100
hFE
VCE=2.0V, IC=500mA
40
fT
VCE=5.0V, IC=10mA, f=100MHz
50
MAX
100
10
100
0.5
1.0
250
160
250
UNITS
nA
µA
nA
V
V
V
V
V
V
V
V
MHz
R1 ( 18-December 2001)
 

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