TIP101 View Datasheet(PDF) - Boca Semiconductor
Part Name
Description
View to exact match
TIP101 Datasheet PDF : 2 Pages
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TIP100, TIP101, TIP102
TIP105, TIP106, TIP107
Collector current
IC
Collector peak current
ICM
Base current
IB
Total power dissipation up to TC = 25°C Ptot
Derate above 25°C
Total power dissipation up to TA = 25°C Ptot
Derate above 25°C
Junction temperature
Tj
Storage temperature
Tstg
THERMAL RESISTANCE
From junction to ambient
From junction to case
Rth j–a
Rth j–c
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Collector cutoff current
IB = 0; VCE = 30 V
IB = 0; VCE = 40 V
IB = 0; VCE = 50 V
IE = 0; VCB = 60V
IE = 0; VCB = 80V
IE = 0; VCB = 100V
Emitter cut-off current
IC = 0; VEB = 5 V
Breakdown voltages
IC = 30 mA; IB = 0
IC = 1 mA; IE = 0
IE = 1 mA; IC = 0
Saturation voltages
IC = 3 A; IB = 6 mA
IC = 8 A; IB = 80 mA
Base-emitter on voltage
IC = 8 A; VCE = 4 V
D.C. current gain
IC = 3 A; VCE = 4 V
ICEO
ICEO
ICEO
ICBO
ICBO
ICBO
IEBO
VCEO(sus)*
VCBO
VEBO
VCEsat*
VCEsat*
VBE(on)*
hFE*
IC = 8 A; VCE = 4 V
Small signal current gain
IC = 3A; VCE = 4V; f = 1.0 MHz
Output capacitance f = 0.1 MHz
IE = 0; VCB = 10V, PNP
NPN
Forward voltage of commutation diode
IF = –IC = 10A; IB = 0
hFE*
|hfe|
Co
VF*
* Pulsed: pulse duration = 300 µs; duty cycle ≤ 2%.
max.
max.
max.
max.
max
max.
max
max.
8.0
15
1.0
80
0.64
2.0
0.016
150
–65 to +150
A
A
A
W
W/° C
W
W/° C
°C
°C
62.5
°C/W
1.56
°C/W
100 101 102
105 106 107
max. 50 – – µA
max. – 50 – µA
max. – – 50 µA
max. 50 – – µA
max. – 50 – µA
max. – – 50 µA
max.
8
mA
min. 60
min. 60
min.
80 100 V
80 100 V
5.0
V
max.
2.0
V
max.
2.5
V
max.
2.8
V
min.
1.0
K
max.
20
K
min.
200
min.
4.0
max.
300
pF
max.
200
pF
max.
2.8
V
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page: 2
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