MCT6.W View Datasheet(PDF) - Fairchild Semiconductor
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Description
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MCT6.W Datasheet PDF : 8 Pages
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DUAL PHOTOTRANSISTOR
OPTOCOUPLERS
MCT6
MCT61
MCT62
ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
EMITTER
Input Forward Voltage
Reverse Voltage
Reverse Current
Junction Capacitance
DETECTOR
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current
Capacitance
Test Conditions Symbol
Min
(IF = 20 mA)
VF
(IR = 10 µA)
VR
3.0
(VR = 5 V)
IR
(VF = 0 V, f = 1 MHz)
CJ
(IC = 1.0 mA, IF = 0) BVCEO
30
(IE = 100 µA, IF = 0) BVECO
6
(VCE = 10 V, IF = 0) ICEO
(VCE = 0 V, f = 1 MHz) CCE
Typ**
1.2
25
0.001
50
85
13
5
8
Max
1.5
10
100
Unit
V
V
µA
pF
V
V
nA
pF
TRANSFER CHARACTERISTICS
AC Characteristic
Test Conditions Symbol Min
SWITCHING TIMES
Non-Saturated Turn-on Time (RL = 100 Ω, IC = 2 mA, VCC = 10 V)
ton
Non-Saturated Turn-off Time (RL = 100 Ω, IC = 2 mA, VCC = 10 V)
toff
Typ**
2.4
2.4
Max
Units
µs
µs
TRANSFER CHARACTERISTICS
DC Characteristic
Test Conditions Symbol Min
Current Transfer Ratio, Collector-Emitter
MCT6
MCT61
MCT62
(IF = 10 mA, VCE = 10 V)
CTR
20
50
(IF = 5 mA, VCE = 5 V)
100
Saturation Voltage
(IF = 16 mA, IC = 2 mA) VCE(sat)
Typ**
0.15
Max
0.40
Units
%
V
ISOLATION CHARACTERISTICS
Characteristic
Input-Output Isolation Voltage
Isolation Resistance
Isolation Capacitance
** All typicals at TA = 25°C
Test Conditions
(II-O ≤ 1 µA, t = 1 min.)
(VI-O = 500 VDC)
(f = 1 MHz)
Symbol
VISO
RISO
CISO
Min
5300
1011
Typ**
0.5
Max
Units
Vac(rms)
Ω
pf
© 2003 Fairchild Semiconductor Corporation
Page 2 of 8
10/20/04
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