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D006 View Datasheet(PDF) - California Micro Devices => Onsemi

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D006
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California Micro Devices => Onsemi CMD
D006 Datasheet PDF : 6 Pages
1 2 3 4 5 6
CCAALILFIOFORRNNIAIAMMICICRROODDEEVVICICEESS
PAC DN006
6 CHANNEL ESD PROTECTION ARRAY
Features
• Six channels of ESD protection
• 15KV ESD protection (HBM)
• 8KV contact, 15KV air ESD protection
per IEC 1000-4-2
• Low loading capacitance, 3 pF typ.
• Miniature 8-pin MSOP or SOIC package
Applications
• I/O port protection for cellular
phones, notebook computers, PDAs, etc.
• ESD protection for VGA (Video) port in
PC’s or Notebook computers
• ESD protection for sensitive
electronic equipment.
Product Description
The PAC DN006™ is a diode array designed to provide 6 channels of ESD protection for electronic components or sub-
systems. Each channel consists of a pair of diodes which steers the ESD current pulse either to the positive (VP) or
negative (VN) supply. The PAC DN006 will protect against ESD pulses up to 15 KV Human Body Model (100 pF
capacitor discharging through a 1.5Kresistor) and 8KV contact discharge per International Standard IEC1000-4-2.
This device is particularly well-suited for portable electronics (e.g. cellular phones, PDAs, notebook computers) because
of its small package footprint, high ESD protection level, and low loading capacitance. It is also suitable for protecting
video output lines and I/O ports in computers and peripheral equipment.
ABSOLUTE MAXIMUM RATINGS
Diode Forward DC Current (Note 1)
20mA
Storage Temperature
-65°C to 150°C
Operating Temperature Range
0°C to 70°C
DC Voltage at any Channel Input VN-0.5V to VP+0.5V
Note 1: Only one diode conducting at a time.
SCHEMATIC CONFIGURATION
STANDARD SPECIFICATIONS
Parameter
Operating Supply Voltage (VP-VN)
Diode Forward Voltage, IF = 20mA, T = 25°C
Diode reverse breakdown voltage, T = 25°C
ESD Protection
Peak Discharge Voltage at any Channel Input, in-system (Note 2)
000Human Body Model, Method 3015 (Note 3, 4)
Min.
0.65 V
17.0 V
±15 KV
000Contact Discharge per IEC 1000-4-2 (Note 5)
±8KV
000Air Discharge per IEC 1000-4-2 (Note 5)
Channel Clamp Voltage @ 15KV ESD HBM, T = 25°C
(Notes 3, 4)
000Positive transients
000Negative transients
Channel Leakage Current, T = 25°C
±15KV
Channel Input Capacitance (Measured @ 1 MHz)
VP = 5V, VN = 0V, VINPUT= 2.5V
Package Power Rating
000SOIC Package
000MSOP Package
Typ.
0.1 µA
3pF
Max.
5.5 V
0.95 V
VP+13.0 V
VN-13.0 V
1.0 µA
6pF
350mW
200mW
Note 2:
Note 3:
Note 4:
Note 5:
From I/O pins to VP or VN only. VP bypassed to VN with 0.2 µF ceramic capacitor.
Human Body Model per MIL-STD-883, Method 3015, CDischarge=100pF, RDischarge=1.5K, VP=5.0V, VN=GND.
This parameter is guaranteed by design and characterization.
Standard IEC1000-4-2 with CDischarge=150pF, and RDischarge=330, VP=5V, VN=GND.
© 1999 Calirorn©ia 1M9ic9ro9 DCeavliicfeosrnCoiarpM. iAclrlorigDhetvsirceesserCveodr.p. All rights reserved.
PAC DN006™ is a trademark of California Micro Devices Corp.
3/99 Rev 1
215 Topaz Street, Milpitas, California 95035 Tel: (408) 263-3214 Fax: (408) 263-7846 www.calmicro.com
3/99 Rev. 1 215 Topaz Street, Milpitas, California 95035 Tel: (408) 263-3214 Fax: (408) 263-7846 www.calmicro.com 1
 

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