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MC33927 View Datasheet(PDF) - Freescale Semiconductor

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Description
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MC33927
Freescale
Freescale Semiconductor Freescale
MC33927 Datasheet PDF : 44 Pages
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ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
Characteristics noted under conditions 8.0V VPWR = VBAT 40V, -40°C TA 125°C, unless otherwise noted. Typical
values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
CHARGE PUMP
Charge Pump
High-Side Switch On-Resistance
Low-Side Switch On-Resistance
Regulation Threshold Difference(13)(15)
Charge Pump Output Voltage(14), (15)
IOUT = 40mA, 6.0V < VBAT < 8.0V
IOUT = 40mA, VBAT > = 8.0V
RDS(on)_HS
6.0
10
RDS(on)_LS
5.0
9.4
VTHREG
250
500
900
mV
VCP
V
8.5
9.5
12
GATE DRIVE
High-Side Driver On-Resistance (Sourcing)
VPWR = VBAT = 16V, -40°C TA 25°C
VPWR = VBAT = 16V, 25°C < TA 125°C
RDS(on)_H_SRC
6.0
8.5
High-Side Driver On-Resistance (Sinking)
VPWR = VBAT = 16V
High-Side Current Injection Allowed Without Malfunction(15), (16)
Low-Side Driver On-Resistance (Sourcing)
VPWR = VBAT = 16V, -40°C TA 25°C
VPWR = VBAT = 16V, 25°C < TA 125°C
RDS(on)_H_SINK
IHS_INJ
RDS(on)_L_SRC
3.0
0.5
A
6.0
8.5
Low-Side Driver On-Resistance (Sinking)
VPWR = VBAT = 16 V
RDS(on)_L_SINK
3.0
Low-Side Current Injection Allowed Without Malfunction(15), (16)
ILS_INJ
0.5
Α
Gate Source Voltage, VPWR = VBAT = 40V
V
High-Side, IGATE = 0(17)
Low-Side, IGATE = 0
VGS_H
VGS_L
13
14.8
16.5
13
15.4
17
High-Side Gate Drive Output Leakage Current, Per Output(18)
IHS_LEAK
18
µA
Notes
13. When VLS is this amount below the normal VLS linear regulation threshold, the pump is enabled.
14. With recommended external components (1.0µF, MUR 120 diode). The Charge Pump is designed to supply the gate currents of a
system with 100A FETs in a 12V application.
15. This parameter is a design characteristic, not production tested.
16. Current injection only occurs during output switch transitions. The IC is immune to specified injected currents for a duration of
approximately 1 µs after an output switch transition. 1 µs is sufficient for all intended applications of this IC.
17. If a slightly higher gate voltage is required, larger bootstrap capacitors are required. At high duty cycles, the bootstrap voltage may not
recover completely, leading to a higher output on-resistance. This effect can be minimized by using low ESR capacitors for the bootstrap
and the VLS capacitors.
18. A small internal charge pump will supply up to 30 µA nominal to compensate for leakage on the high-side FET gate output and maintain
voltages after bootstrap events. It is not intended for external components to be connected to the High-Side FET gate, but small amounts
of additional leakage can be accommodated.
Analog Integrated Circuit Device Data
Freescale Semiconductor
33927
9
 

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