MC33035DWG View Datasheet(PDF) - ON Semiconductor
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MC33035DWG Datasheet PDF : 28 Pages
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MC33035, NCV33035
Drive Outputs
The three top drive outputs (Pins 1, 2, 24) are open
collector NPN transistors capable of sinking 50 mA with a
minimum breakdown of 30 V. Interfacing into higher
voltage applications is easily accomplished with the circuits
shown in Figures 24 and 25.
The three totem pole bottom drive outputs (Pins 19, 20,
21) are particularly suited for direct drive of N−Channel
MOSFETs or NPN bipolar transistors (Figures 26, 27, 28
and 29). Each output is capable of sourcing and sinking up
to 100 mA. Power for the bottom drives is supplied from VC
(Pin 18). This separate supply input allows the designer
added flexibility in tailoring the drive voltage, independent
of VCC. A zener clamp should be connected to this input
when driving power MOSFETs in systems where VCC is
greater than 20 V so as to prevent rupture of the MOSFET
gates.
The control circuitry ground (Pin 16) and current sense
inverting input (Pin 15) must return on separate paths to the
central input source ground.
Thermal Shutdown
Internal thermal shutdown circuitry is provided to protect
the IC in the event the maximum junction temperature is
exceeded. When activated, typically at 170°C, the IC acts as
though the Output Enable was grounded.
14
4
5
2
6
POS
1
RDLY 3
DEC
22
24
VM
17
18
UVLO
REF
Reset
21
8
CDLY
7
25 μA
20
ǒ Ǔ tDLY [ RDLY CDLY In
Vref – (IIL enable RDLY)
Vth enable – (IIL enable RDLY)
ǒ Ǔ [ RDLY CDLY In
6.25 – (20 x 10–6 RDLY)
1.4 – (20 x 10–6 RDLY)
Figure 23. Timed Delayed Latched
Over Current Shutdown
Rotor
Position
Decoder
14
VM
2
VCC
Q2
1
Q1
Q3
24
Load
21
20
Q4
19
Transistor Q1 is a common base stage used to level shift from VCC to the
high motor voltage, VM. The collector diode is required if VCC is present
while VM is low.
Figure 24. High Voltage Interface with
NPN Power Transistors
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