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MC14513BCPG View Datasheet(PDF) - ON Semiconductor

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MC14513BCPG
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MC14513BCPG Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
MC14513B
BCD-To-Seven Segment
Latch/Decoder/Driver
CMOS MSI
(LowPower Complementary MOS)
The MC14513B BCDtoseven segment latch/decoder/driver is
constructed with complementary MOS (CMOS) enhancement mode
devices and NPN bipolar output drivers in a single monolithic structure.
The circuit provides the functions of a 4bit storage latch, an 8421
BCDtoseven segment decoder, and has output drive capability. Lamp
test (LT), blanking (BI), and latch enable (LE) inputs are used to test the
display, to turnoff or pulse modulate the brightness of the display, and
to store a BCD code, respectively. The Ripple Blanking Input (RBI) and
Ripple Blanking Output (RBO) can be used to suppress either leading
or trailing zeroes. It can be used with sevensegment light emitting
diodes (LED), incandescent, fluorescent, gas discharge, or liquid crystal
readouts either directly or indirectly.
Applications include instrument (e.g., counter, DVM, etc.) display
driver, computer/calculator display driver, cockpit display driver, and
various clock, watch, and timer uses.
Features
Low Logic Circuit Power Dissipation
HighCurrent Sourcing Outputs (Up to 25 mA)
Latch Storage of Binary Input
Blanking Input
Lamp Test Provision
Readout Blanking on all Illegal Input Combinations
Lamp Intensity Modulation Capability
Time Share (Multiplexing) Capability
Adds Ripple Blanking In, Ripple Blanking Out to MC14511B
Supply Voltage Range = 3.0 V to 18 V
Capable of Driving Two LowPower TTL Loads, One LowPower
Schottky TTL Load to Two HTL Loads Over the Rated Temperature
Range
These Devices are PbFree and are RoHS Compliant
MAXIMUM RATINGS (Voltages Referenced to VSS)
Parameter
Symbol
Value
Unit
DC Supply Voltage Range
Input Voltage Range, All Inputs
DC Current Drain per Input Pin
VDD
0.5 to +18.0
V
Vin 0.5 to VDD +0.5 V
I
10
mA
Power Dissipation per Package (Note 1) PD
500
mW
Operating Temperature Range
TA
55 to +125
°C
Storage Temperature Range
Tstg
65 to +150
°C
Maximum Continuous Output Drive
IOHmax
25
mA
Current (Source) per Output
Maximum Continuous Output Power POHmax
50
mW
(Source) per Output (Note 2)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Temperature Derating: Plastic “P and D/DW”
Packages: – 7.0 mW/_C From 65_C To 125_C
2. POHmax = IOH (VDD VOH)
© Semiconductor Components Industries, LLC, 2011
1
June, 2011 Rev. 7
http://onsemi.com
PDIP18
P SUFFIX
CASE 707
1
MARKING DIAGRAM
18
MC14513BCP
AWLYYWWG
1
A = Assembly Location
WL = Wafer Lot
YY = Year
WW = Work Week
G = PbFree Package
ORDERING INFORMATION
Device
Package
Shipping
MC14513BCPG
PDIP18
(PbFree)
20 Units/Rail
This device contains protection circuitry to protect
the inputs against damage due to high static voltages
or electric fields. However, it is advised that normal
precautions be taken to avoid application of any
voltage higher than maximum rated voltages to this
highimpedance circuit. A destructive high current
mode may occur if Vin and Vout are not constrained to
the range VSS v (Vin or Vout) v VDD.
Due to the sourcing capability of this circuit,
damage can occur to the device if VDD is applied, and
the outputs are shorted to VSS and are at a logical 1
(See Maximum Ratings).
Unused inputs must always be tied to an appropriate
logic voltage level (e.g., either VSS or VDD).
Publication Order Number:
MC14513B/D
 

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