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MC-4R256CEE6C-745 View Datasheet(PDF) - NEC => Renesas Technology

Part NameDescriptionManufacturer
MC-4R256CEE6C-745 Direct Rambus™ DRAM RIMM™ Module 256M-BYTE (128M-WORD x 16-BIT) NEC
NEC => Renesas Technology NEC
MC-4R256CEE6C-745 Datasheet PDF : 16 Pages
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MC-4R256CEE6B, 4R256CEE6C
Electrical Specification
Absolute Maximum Ratings
Symbol
VI,ABS
VDD,ABS
TSTORE
Parameter
Voltage applied to any RSL or CMOS signal pad with respect to GND
Voltage on VDD with respect to GND
Storage temperature
MIN.
0.3
0.5
50
MAX.
Unit
VDD + 0.3
V
VDD + 1.0
V
+100
°C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
DC Recommended Electrical Conditions
Symbol
Parameter and conditions
VDD
VCMOS
Supply voltage
CMOS I/O power supply at pad
VREF
VIL
VIH
VIL,CMOS
VIH,CMOS
VOL,CMOS
VOH,CMOS
IREF
ISCK,CMD
ISIN,SOUT
Reference voltage
RSL input low voltage
RSL input high voltage
CMOS input low voltage
CMOS input high voltage
CMOS output low voltage, IOL,CMOS = 1 mA
CMOS output high voltage, IOH,CMOS = 0.25 mA
VREF current, VREF,MAX
CMOS input leakage current, (0 VCMOS VDD)
CMOS input leakage current, (0 VCMOS VDD)
MIN.
MAX.
Unit
2.50 0.13
2.50 + 0.13
V
2.5V controllers 2.5 0.13
2.5 + 0.25
V
1.8V controllers
1.8 0.1
1.8 + 0.2
1.4 0.2
1.4 + 0.2
V
VREF 0.5
VREF 0.2
V
VREF + 0.2
VREF + 0.5
V
0.3
0.5VCMOS 0.25 V
0.5VCMOS+0.25 VCMOS + 0.3
V
0.3
V
VCMOS 0.3
V
160.0
+160.0
µA
160.0
+160.0
µA
10.0
+10.0
µA
8
Preliminary Data Sheet M14541EJ1V1DS00
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