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MC-4516CB646XF-A10 View Datasheet(PDF) - Elpida Memory, Inc

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Description
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MC-4516CB646XF-A10 Datasheet PDF : 16 Pages
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DATA SHEET
MOS INTEGRATED CIRCUIT
MC-4516CB646
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE
UNBUFFERED TYPE
Description
EThe MC-4516CB646EF, MC-4516CB646PF and MC-4516CB646XF are 16,777,216 words by 64 bits synchronous
dynamic RAM module on which 8 pieces of 128M SDRAM: µPD45128841 are assembled.
This module provides high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
ODecoupling capacitors are mounted on power supply line for noise reduction.
Features
16,777,216 words by 64 bits organization
L Clock frequency and access time from CLK
Part number
/CAS latency
Clock frequency
(MAX.)
Access time from CLK
(MAX.)
MC-4516CB646EF-A80
CL = 3
125 MHz
6 ns
CL = 2
100 MHz
6 ns
MC-4516CB646EF-A10
CL = 3
100 MHz
6 ns
PCL = 2
77 MHz
7 ns
MC-4516CB646PF-A80
CL = 3
125 MHz
6 ns
CL = 2
100 MHz
6 ns
r MC-4516CB646PF-A10
CL = 3
100 MHz
6 ns
CL = 2
77 MHz
7 ns
o MC-4516CB646XF-A80
CL = 3
125 MHz
6 ns
CL = 2
100 MHz
6 ns
MC-4516CB646XF-A10
CL = 3
100 MHz
6 ns
d CL = 2
77 MHz
7 ns
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
Pulsed interface
u Possible to assert random column address in every cycle
Quad internal banks controlled by BA0 and BA1 (Bank Select)
Programmable burst-length (1, 2, 4, 8 and full page)
Programmable wrap sequence (sequential / interleave)
c Programmable /CAS latency (2, 3)
Automatic precharge and controlled precharge
t CBR (Auto) refresh and self refresh
All DQs have 10 Ω ±10 % of series resistor
Single 3.3 V ± 0.3 V power supply
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for
availability and additional information.
Document No. E0059N10 (1st edition)
(Previous No. M14334EJ3V0DS00)
Date Published January 2001 CP (K)
Printed in Japan
This product became EOL in March, 2004.
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
 

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