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MC-458CB647XFA-A75 View Datasheet(PDF) - NEC => Renesas Technology

Part Name
Description
View to exact match
MC-458CB647XFA-A75
NEC
NEC => Renesas Technology NEC
MC-458CB647XFA-A75 Datasheet PDF : 16 Pages
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DATA SHEET
MOS INTEGRATED CIRCUIT
MC-458CB647
8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE
UNBUFFERED TYPE
5 Description
The MC-458CB647EFA, MC-458CB647PFA and MC-458CB647XFA are 8,388,608 words by 64 bits synchronous
dynamic RAM module on which 4 pieces of 128M SDRAM: µPD45128163 are assembled.
This module provides high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
8,388,608 words by 64 bits organization
Clock frequency and access time from CLK
Part number
MC-458CB647EFA-A75
MC-458CB647PFA-A75
5 MC-458CB647XFA-A75
/CAS latency
CL = 3
CL = 2
CL = 3
CL = 2
CL = 3
CL = 2
Clock frequency
(MAX.)
133 MHz
100 MHz
133 MHz
100 MHz
133 MHz
100 MHz
Access time from CLK
(MAX.)
5.4 ns
6.0 ns
5.4 ns
6.0 ns
5.4 ns
6.0 ns
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
Pulsed interface
Possible to assert random column address in every cycle
Quad internal banks controlled by BA0 and BA1 (Bank Select)
Programmable burst-length (1, 2, 4, 8 and full page)
Programmable wrap sequence (sequential / interleave)
Programmable /CAS latency (2, 3)
Automatic precharge and controlled precharge
CBR (Auto) refresh and self refresh
All DQs have 10 Ω ± 10 % of series resistor
Single 3.3 V ± 0.3 V power supply
LVTTL compatible
4,096 refresh cycles /64 ms
Burst termination by Burst Stop command and Precharge command
168-pin dual in-line memory module (Pin pitch = 1.27 mm)
Unbuffered type
Serial PD
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M14279EJ4V0DS00 (4th edition)
Date Published September 2000 NS CP(K)
The mark shows major revised points.
Printed in Japan
©
1999
 

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