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MC-4516CB647 View Datasheet(PDF) - NEC => Renesas Technology

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Description
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MC-4516CB647 Datasheet PDF : 16 Pages
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DATA SHEET
MOS INTEGRATED CIRCUIT
MC-4516CB647
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE
UNBUFFERED TYPE
5 Description
The MC-4516CB647EF and MC-4516CB647PF are 16,777,216 words by 64 bits synchronous dynamic RAM
module on which 8 pieces of 128M SDRAM: µPD45128841 are assembled.
This module provides high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
16,777,216 words by 64 bits organization
Clock frequency and access time from CLK
Part number
/CAS latency
Clock frequency
(MAX.)
Access time from CLK
(MAX.)
MC-4516CB647EF-A75
5
5 MC-4516CB647PF-A75
5
CL = 3
CL = 2
CL = 3
CL = 2
133 MHz
100 MHz
133 MHz
100 MHz
5.4 ns
6.0 ns
5.4 ns
6.0 ns
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
Pulsed interface
Possible to assert random column address in every cycle
Quad internal banks controlled by BA0 and BA1 (Bank Select)
Programmable burst-length (1, 2, 4, 8 and full page)
Programmable wrap sequence (sequential / interleave)
5 Programmable /CAS latency (2, 3)
Automatic precharge and controlled precharge
CBR (Auto) refresh and self refresh
All DQs have 10 Ω ±10 % of series resistor
Single 3.3 V ± 0.3 V power supply
LVTTL compatible
4,096 refresh cycles/64 ms
Burst termination by Burst Stop command and Precharge command
168-pin dual in-line memory module (Pin pitch = 1.27 mm)
Unbuffered type
Serial PD
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M14406EJ2V0DS00 (2nd edition)
The mark shows major revised points.
Date Published January 2000 NS CP(K)
©
Printed in Japan
1999
 

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