MBM29F016A-12 View Datasheet(PDF) - Spansion Inc.

Part Name

Description

View to exact match

MBM29F016A-12

FLASH MEMORY CMOS 16M (2M × 8) BIT

Spansion Inc. 

MBM29F016A-70/-90/-12

s AC CHARACTERISTICS

• Read Only Operations Characteristics

Parameter

Symbol

JEDEC Standard

Test

Setup

-70 *1

-90 *2

-12 *2

Unit

Min Max Min Max Min Max

Read Cycle Time

tAVAV

tRC

—

70 — 90 — 120 — ns

Address to Output Delay

tAVQV

tACC

CE = VIL

OE = VIL

—

70

— 90 — 120 ns

Chip Enable to Output Delay

tELQV

tCE

OE = VIL — 70 — 90 — 120 ns

Output Enable to Output Delay

tGLQV

tOE

—

— 40 — 40 — 50 ns

Chip Enable to Output High-Z

tEHQZ

tDF

—

— 20 — 20 — 30 ns

Output Enable to Output High-Z

tGHQZ

tDF

—

— 20 — 20 — 30 ns

Output Hold Time From Addresses,

CE or OE, whichever occurs first

tAXQX

tOH

—

0 — 0 — 0 — ns

RESET Pin Low to Read Mode

—

tREADY

—

— 20 — 20 — 20 µs

*1 : Test Conditions:

Output Load: 1 TTL gate and 30 pF

Input rise and fall times: 5 ns

Input pulse levels: 0.0 V or 3.0 V

Timing measurement reference level

Input: 1.5 V

Output: 1.5 V

*2 : Test Conditions:

Output Load: 1 TTL gate and 100 pF

Input rise and fall times: 5 ns

Input pulse levels: 0.45 V or 2.4 V

Timing measurement reference level

Input: 0.8 V and 2.0 V

Output: 0.8 V and 2.0 V

Device

Under

Test

CL

5.0 V

Diode = 1N3064

or Equivalent

2.7 kΩ

6.2 kΩ

Diode = 1N3064

or Equivalent

Notes : • CL = 30 pF including jig capacitance

• CL = 100 pF including jig capacitance

Test Conditions

22

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