MBM29F017A-12PFTN View Datasheet(PDF) - Fujitsu

Part Name

Description

View to exact match

MBM29F017A-12PFTN

FLASH MEMORY CMOS 16M (2M × 8) BIT

Fujitsu 

MBM29F017A-70/-90/-12

s ERASE AND PROGRAMMING PERFORMANCE

Parameter

Min.

Limits

Typ.

Max.

Sector Erase Time

—

1

8

Byte Programming Time

—

8

150

Chip Programming Time

—

16.8

40

Erase/Program Cycle

100,000

—

—

Unit

Comments

sec

Excludes 00H programming

prior to erasure

µs

Excludes system-level

overhead

sec

Excludes system-level

overhead

Cycles

s TSOP PIN CAPACITANCE

Parameter

Symbol

Parameter Description

CIN1

COUT

CIN2

Input Capacitance

Output Capacitance

Control Pin Capacitance

Note: Test conditions TA = 25°C, f = 1.0 MHz

s SON PIN CAPACITANCE

Parameter

Symbol

Parameter Description

CIN1

COUT

CIN2

Input Capacitance

Output Capacitance

Control Pin Capacitance

Note: Test conditions TA = 25°C, f = 1.0 MHz

Test Setup

VIN = 0

VOUT = 0

VIN = 0

Test Setup

VIN = 0

VOUT = 0

VIN = 0

Typ.

Max.

Unit

8

10

pF

8

10

pF

9

10

pF

Typ.

Max.

Unit

8

10

pF

8

10

pF

9

10

pF

43

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