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MA3D761 View Datasheet(PDF) - Panasonic Corporation

Part NameDescriptionManufacturer
MA3D761 Schottky Barrier Diodes (SBD) Panasonic
Panasonic Corporation Panasonic
MA3D761 Datasheet PDF : 2 Pages
1 2
Schottky Barrier Diodes (SBD)
MA3D761
Silicon epitaxial planar type (cathode common)
For switching power supply
9.9 ± 0.3
Unit : mm
4.6 ± 0.2
2.9 ± 0.2
I Features
Low forward rise voltage VF
TO-220D (Full-pack package) with high dielectric breakdown
voltage > 5.0 kV
Easy-to-mount, caused by its V cut lead end
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Repetitive peak reverse voltage VRRM
90
V
Average forward current
IF(AV)
10
A
Non-repetitive peak forward
IFSM
100
A
surge current*
Junction temperature
Storage temperature
Tj
40 to +125
°C
Tstg
40 to +125
°C
Note) * : Half sine-wave; 10 ms/cycle
φ 3.2 ± 0.1
1.4 ± 0.2
1.6 ± 0.2
0.8 ± 0.1
2.54 ± 0.3
1 2 3 5.08 ± 0.5
2.6 ± 0.1
0.55 ± 0.15
1 : Anode
2 : Cathode
(Common)
3 : Anode
TO-220D Package
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Thermal resistance*
IR
VF
Rth(j-c)
VR = 90 V, TC = 25°C
IF = 5 A, TC = 25°C
Direct current (between junction and case)
3
mA
0.85
V
3 °C/W
Note) 1. Rated input/output frequency: 150 MHz
2. * : TC = 25°C
1
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