M74HCT86 View Datasheet(PDF) - STMicroelectronics
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Description
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M74HCT86 Datasheet PDF : 8 Pages
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M74HCT86
DC SPECIFICATIONS
Symbol
Parameter
VIH High Level Input
Voltage
VIL Low Level Input
Voltage
VOH
VOL
II
ICC
∆ ICC
High Level Output
Voltage
Low Level Output
Voltage
Input Leakage
Current
Quiescent Supply
Current
Additional Worst
Case Supply
Current
Test Condition
VCC
(V)
4.5
to
5.5
4.5
to
5.5
IO=-20 µA
4.5
IO=-4.0 mA
4.5
IO=20 µA
IO=4.0 mA
5.5 VI = VCC or GND
Value
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
2.0
2.0
2.0
V
0.8
0.8
0.8 V
4.4 4.5
4.4
4.4
V
4.18 4.31
4.13
4.10
0.0 0.1
0.17 0.26
0.1
0.33
0.1
V
0.40
± 0.1
±1
± 1 µA
5.5 VI = VCC or GND
5.5
Per Input pin
VI = 0.5V or
VI = 2.4V
Other Inputs at
VCC or GND
IO = 0
1
10
20 µA
2.0
2.9
3.0 mA
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6ns)
Test Condition
Value
Symbol
Parameter
VCC
(V)
tTLH tTHL Output Transition
Time
4.5
tPLH tPHL Propagation Delay
Time
4.5
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
8 15
19
23 ns
15 24
30
36 ns
CAPACITIVE CHARACTERISTICS
Test Condition
Value
Symbol
Parameter
VCC
(V)
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
CIN Input Capacitance
5 10
10
10 pF
CPD Power Dissipation
Capacitance (note
48
pF
1)
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/4 (per gate)
3/8
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