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M74HC21M1R View Datasheet(PDF) - STMicroelectronics

Part Name
Description
View to exact match
M74HC21M1R
ST-Microelectronics
STMicroelectronics ST-Microelectronics
M74HC21M1R Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
M74HC21
DC SPECIFICATIONS
Symbol
Parameter
VIH High Level Input
Voltage
VIL Low Level Input
Voltage
VOH High Level Output
Voltage
VOL Low Level Output
Voltage
II
Input Leakage
Current
ICC Quiescent Supply
Current
Test Condition
VCC
(V)
2.0
4.5
6.0
2.0
4.5
6.0
2.0
IO=-20 µA
4.5
IO=-20 µA
6.0
IO=-20 µA
4.5
IO=-4.0 mA
6.0
IO=-5.2 mA
2.0
IO=20 µA
4.5
IO=20 µA
6.0
IO=20 µA
4.5
IO=4.0 mA
6.0
IO=5.2 mA
6.0 VI = VCC or GND
Value
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
1.5
1.5
1.5
3.15
3.15
3.15
V
4.2
4.2
4.2
0.5
0.5
0.5
1.35
1.35
1.35 V
1.8
1.8
1.8
1.9 2.0
1.9
1.9
4.4 4.5
4.4
4.4
5.9 6.0
5.9
5.9
V
4.18 4.31
4.13
4.10
5.68 5.8
5.63
5.60
0.0 0.1
0.1
0.1
0.0 0.1
0.1
0.1
0.0 0.1
0.1
0.1 V
0.17 0.26
0.33
0.40
0.18 0.26
0.33
0.40
± 0.1
±1
± 1 µA
6.0 VI = VCC or GND
1
10
20 µA
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6ns)
Test Condition
Value
Symbol
Parameter
VCC
(V)
tTLH tTHL Output Transition 2.0
Time
4.5
6.0
tPLH tPHL Propagation Delay 2.0
Time
4.5
6.0
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
30 75
95
110
8 15
19
22 ns
7 13
16
19
40 100
125
150
13 20
25
30 ns
11 17
21
26
CAPACITIVE CHARACTERISTICS
Test Condition
Value
Symbol
Parameter
VCC
(V)
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
CIN Input Capacitance 5.0
5 10
10
10 pF
CPD Power Dissipation
Capacitance (note 5.0
25
pF
1)
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/4 (per gate)
3/8
 

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