M36W216TI, M36W216BI
Figure 24. SRAM Low VDDS Data Retention AC Waveforms, E1S or UBS / LBS Controlled
VDDS
E1S or
UBS, LBS
VDDS (min)
DATA RETENTION MODE
tCDR
tR
VDDS (min)
AI07918
Table 24. SRAM Low VDDS Data Retention Characteristic
Symbol
Parameter
Test Condition
IDDDR
Supply Current (Data
Retention)
VDDS = 1.5V, E1S ≥ VDDS – 0.2V,
VIN ≥ VDDS – 0.2V or VIN ≤ 0.2V
VDR
Supply Voltage (Data
Retention)
tCDR Chip Disable to Power Down
E1S ≥ VCCS – 0.2V, E2S ≤ 0.2V
tR
Operation Recovery Time
Note: 1. All other Inputs VIH ≤ VDDS –0.2V or VIL ≤ 0.2V.
2. Sampled only. Not 100% tested.
Min Typ Max Unit
3
10 µA
1.5
3.3 V
0
ns
70
ns
45/62