M36W216 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

View to exact match

M36W216

16 Mbit 1Mb x16 / Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM / Multiple Memory Product

STMicroelectronics 

M36W216TI, M36W216BI

Figure 24. SRAM Low VDDS Data Retention AC Waveforms, E1S or UBS / LBS Controlled

VDDS

E1S or

UBS, LBS

VDDS (min)

DATA RETENTION MODE

tCDR

tR

VDDS (min)

AI07918

Table 24. SRAM Low VDDS Data Retention Characteristic

Symbol

Parameter

Test Condition

IDDDR

Supply Current (Data

Retention)

VDDS = 1.5V, E1S ≥ VDDS – 0.2V,

VIN ≥ VDDS – 0.2V or VIN ≤ 0.2V

VDR

Supply Voltage (Data

Retention)

tCDR Chip Disable to Power Down

E1S ≥ VCCS – 0.2V, E2S ≤ 0.2V

tR

Operation Recovery Time

Note: 1. All other Inputs VIH ≤ VDDS –0.2V or VIL ≤ 0.2V.

2. Sampled only. Not 100% tested.

Min Typ Max Unit

3

10 µA

1.5

3.3 V

0

ns

70

ns

45/62

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