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ILX553A View Datasheet(PDF) - Sony Semiconductor

Part Name
Description
View to exact match
ILX553A
Sony
Sony Semiconductor Sony
ILX553A Datasheet PDF : 12 Pages
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ILX553A
Electrooptical Characteristics (Note 1)
Ta = 25°C, VDD = 12V, fφR = 2MHz, Input clock = 5Vp-p,
Light source = 3200K, IR cut filter CM-500S (t = 1.0mm)
Item
Symbol
Min.
Typ. Max. Unit
Remarks
Sensitivity
R
11.8
14.8
17.8 V/(lx · s) Note 2
Sensitivity nonuniformity
PRNU
4
10
%
Note 3
Saturation output voltage
Saturation exposure
Dark voltage average
Dark signal nonuniformity
Image lag
Supply current
Total transfer efficiency
Output impedance
Offset level
VSAT
SER
VDRK
DSNU
IL
IVDD
TTE
ZO
VOS
1
2
V
Note 4
0.14
lx · s
Note 5
0.3
2
mV
Note 6
0.6
3
mV
0.02
%
Note 7
15
30
mA
92
98
%
230
6.2
V
Note 8
Notes
1) In accordance with the given electrooptical characteristics, the even black level is defined as the average
value of D14, D15, to D62.
2) For the sensitivity test light is applied with a uniform intensity of illumination.
3) PRNU is defined as indicated below. Ray incidence conditions are the same as for Note 2.
VOUT = 500mV (Typ.)
PRNU = (VMAX VMIN)/2 × 100 [%]
VAVE
The maximum output of 5150 pixels is set to VMAX, the minimum output to VMIN and the average output to
VAVE.
4) Use below the minimum value of the saturation output voltage.
5) Saturation exposure is defined as follows.
VSAT
SE =
R
6) Optical signal accumulated time τ int stands at 10ms.
7) VOUT = 500mV (Typ.)
8) VOS is defined as indicated bellow.
VOUT
VOS
GND
3
 

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