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M24C16-F View Datasheet(PDF) - STMicroelectronics

Part Name
Description
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M24C16-F
ST-Microelectronics
STMicroelectronics ST-Microelectronics
M24C16-F Datasheet PDF : 39 Pages
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DC and AC parameters
M24C16-W M24C16-R M24C16-F
Symbol
Table 13. DC characteristics (M24C16-W, device grade 6)
Parameter
Test conditions (in addition to those
in Table 5 and Table 9)
Min.
Max. Unit
ILI
Input leakage current VIN = VSS or VCC, device in Standby
(SCL, SDA)
mode
-
±2
µA
ILO
Output leakage
current
SDA in Hi-Z, external voltage applied
on SDA: VSS or VCC
ICC
Supply current (Read) VCC = 5.5 V, fc = 400 kHz
VCC = 2.5 V, fc = 400 kHz
ICC0
Supply current (Write)
Value overaged over tW,
2.5 V VCC 5.5 V
ICC1
Standby supply
current
Device not selected(2),
VIN = VSS or VCC, VCC = 2.5 V
Device not selected(2),
VIN = VSS or VCC, VCC = 5.5 V
VIL
Input low voltage
(SCL, SDA, WC)
-
-
±2
µA
-
1
mA
-
1
mA
-
1(1)
mA
-
2(3)
µA
-
3(3)
µA
–0.45 0.3 VCC V
VIH
Input high voltage
(SCL, SDA, WC)
-
0.7 VCC VCC +1 V
VOL Output low voltage
IOL = 2.1 mA, VCC = 2.5 V or
IOL = 3 mA, VCC = 5.5 V
-
0.4
V
1.
Characterized only (not tested in production) for devices identified by process letter T.
than 0.5 mA when writing data with an ambient temperature greater than 25 °C.
ICC0(max)is lower
2. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the
completion of the internal write cycle tW (tW is triggered by the correct decoding of a Write instruction).
3. 1 µA for previous devices identified by process letters G or S.
24/39
DocID023494 Rev 6
 

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