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2SA933AS View Datasheet(PDF) - ROHM Semiconductor

Part Name2SA933AS ROHM
ROHM Semiconductor ROHM
Description50V, 0.15A general purpose transistor
2SA933AS Datasheet PDF : 3 Pages
1 2 3
Transistors
2SC2412K / 2SC4081 / 2SC4617 /
2SC5658 / 2SC1740S
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO 60
Collector-emitter breakdown voltage BVCEO 50
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
BVEBO
7
ICBO
IEBO
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
hFE
VCE(sat)
fT
Cob
120
Typ.
180
2
Max.
0.1
0.1
560
0.4
3.5
Unit
V
V
V
µA
µA
V
MHz
pF
Conditions
IC=50µA
IC=1mA
IE=50µA
VCB=60V
VEB=7V
VCE=6V, IC=1mA
IC/IB=50mA/5mA
VCE=12V, IE=2mA, f=100MHz
VCE=12V, IE=0A, f=1MHz
!Packaging specifications and hFE
Type
2SC2412K
2SC4081
Package
Code
Basic ordering
hFE unit (pieces)
QRS
QRS
2SC4617 QRS
2SC5658 QRS
2SC1740S QRS
T146
3000
Taping
T106
TL
3000
3000
hFE values are classified as follows :
Item
Q
R
hFE
120~270 180~390
S
270~560
T2L
8000
Bulk
TP
5000
!Electrical characterristic curves
50
VCE=6V
20
10
5
2
1
0.5
0.2
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
100 Ta=25°C
80
60
40
20
0.50mA
00..4450mmAA
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
0
IB=0A
0 0.4
0.8
1.2 1.6
2.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics ( Ι )
10
Ta=25°C
8
30µA
27µA
24µA
21µA
6
18µA
15µA
4
12µA
9µA
6µA
2
3µA
0
IB=0A
0
4
8
12
16
20
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded emitter output
characteristics ( ΙΙ )
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2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Datasheet

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