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IRFP450 View Datasheet(PDF) - IXYS CORPORATION

Part NameDescriptionManufacturer
IRFP450 Standard Power MOSFET IXYS
IXYS CORPORATION IXYS
IRFP450 Datasheet PDF : 2 Pages
1 2
IRFP 450
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = 8.4 A, pulse test
9.3
S
2800
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
300
pF
150
pF
VGS = 10 V, VDS = 0.5 • VDSS, ID = 14 A
RG = 6.2 Ω, (External)
18
ns
47
ns
92
ns
44
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 14 A
110 150 nC
15 20 nC
50 80 nC
0.65 K/W
0.24
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS
VGS = 0 V
ISM
Repetitive; pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
trr
IF = IS, -di/dt = 100 A/µs, VR = 100 V
14 A
56 A
1.4 V
500
ns
TO-247 AD Outline
123
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
Dim. Millimeter
Min. Max.
A
4.7 5.3
A
2.2 2.54
1
A
2.2 2.6
2
b
1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2
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