2N4403RLRA View Datasheet(PDF) - ON Semiconductor
Part Name
Description
View to exact match
2N4403RLRA Datasheet PDF : 8 Pages
| |||
2N4403
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 150 mAdc, VCE = 2.0 Vdc)(1)
(IC = 500 mAdc, VCE = 2.0 Vdc)(1)
Collector–Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Base–Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
Collector–Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Emitter–Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(VCC = 30 Vdc, VBE = +2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
Storage Time
Fall Time
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = 15 mA, IB2 = 15 mA)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
Symbol
hFE
VCE(sat)
VBE(sat)
fT
Ccb
Ceb
hie
hre
hfe
hoe
td
tr
ts
tf
Min
30
60
100
100
20
—
—
0.75
—
200
—
—
1.5 k
0.1
60
1.0
—
—
—
—
Max
Unit
—
—
—
—
300
—
Vdc
0.4
0.75
Vdc
0.95
1.3
MHz
—
8.5
pF
30
pF
ohms
15 k
8.0
X 10–4
—
500
100
µmhos
15
ns
20
ns
225
ns
30
ns
+2 V
0
-ā16 V
SWITCHING TIME EQUIVALENT TEST CIRCUIT
< 2 ns
1.0 kΩ
10 to 100 µs,
DUTY CYCLE = 2%
-ā30 V
200 Ω
< 20 ns
CS* < 10 pF
+14 V
0
-16 V
Scope rise time < 4.0 ns
1.0 kΩ
1.0 to 100 µs,
DUTY CYCLE = 2%
+ā4.0 V
*Total shunt capacitance of test jig connectors, and oscilloscope
-ā30 V
200 Ω
CS* < 10 pF
Figure 1. Turn–On Time
Figure 2. Turn–Off Time
http://onsemi.com
2
|
|
Share Link: 