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4401 View Datasheet(PDF) - NXP Semiconductors.

Part Name
Description
View to exact match
4401
NXP
NXP Semiconductors. NXP
4401 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Philips Semiconductors
NPN switching transistor
Product specification
2N4401
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
200
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
IEBO
hFE
VCEsat
VBEsat
Cc
Ce
fT
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
IE = 0; VCB = 60 V
IC = 0; VEB = 6 V
VCE = 1 V; see Fig.2
IC = 0.1 mA
20
IC = 1 mA
40
IC = 10 mA
80
IC = 150 mA; note 1
100
IC = 500 mA; VCE = 2 V; note 1
40
IC = 150 mA; IB = 15 mA; note 1
IC = 500 mA; IB = 50 mA; note 1
IC = 150 mA; IB = 15 mA; note 1
IC = 500 mA; IB = 50 mA; note 1
IE = ie = 0; VCB = 5 V; f = 1 MHz
IC = ic = 0; VEB = 500 mV; f = 1 MHz
IC = 20 mA; VCE = 10 V; f = 100 MHz 250
Switching times (between 10% and 90% levels); see Fig.3
ton
turn-on time
td
delay time
tr
rise time
toff
turn-off time
ts
storage time
tf
fall time
ICon = 150 mA; IBon = 15 mA;
IBoff = 15 mA
Note
1. Pulse test: tp 300 µs; δ ≤ 0.02.
MAX.
50
50
UNIT
nA
nA
300
400
mV
750
mV
950
mV
1.2
V
6.5
pF
30
pF
MHz
35
ns
15
ns
20
ns
250
ns
200
ns
60
ns
1999 Apr 23
3
 

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