LS103C-GS18(2010) View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
View to exact match
LS103C-GS18 Datasheet PDF : 5 Pages
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LS103A, LS103B, LS103C
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
LS103A V(BR)
40
V
Reverse Breakdown Voltage
IR = 10 µA
LS103B V(BR)
30
V
LS103C V(BR)
20
V
VR = 30 V
LS103A
IR
5
µA
Leakage current
VR = 20 V
LS103B
IR
5
µA
VR = 10 V
LS103C
IR
5
µA
Forward voltage drop
IF = 20 mA
VF
IF = 200 mA
VF
370
mV
600
mV
Diode capacitance
VR = 0 V, f = 1 MHz
CD
50
pF
Reverse recovery time
IF = IR = 50 to 200 mA,
recover to 0.1 IR
trr
10
ns
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
1000
100
10
1
0.1
0.01
0.001
0 100 200 300 400 500 600 700 800 900 1000
16765
VF - Forward Voltage (mV)
Figure 1. Forward Current vs. Forward Voltage
10 000
1000
100
10
1
0
16767
20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Figure 3. Reverse Current vs. Junction Temperature
5
4
3
2
1
0
0.0
16766
0.5
1.0
1.5
2.0
VF - Forward Voltage (V)
Figure 2. Forward Current vs. Forward Voltage
30
f = 1 MHz
25
20
15
10
5
0
0
16768
5
10 15 20 25 30
VR - Reverse Voltage (V)
Figure 4. Diode Capacitance vs. Reverse Voltage
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2
For technical questions within your region, please contact one of the following: Document Number 85631
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.4, 05-Aug-10
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