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ST92124JCR1TC View Datasheet(PDF) - STMicroelectronics

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ST92124JCR1TC Datasheet PDF : 429 Pages
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ST92F124/F150/F250 - SINGLE VOLTAGE FLASH & E3 TM (EMULATED EEPROM)
3 SINGLE VOLTAGE FLASH & E3 TM (EMULATED EEPROM)
3.1 INTRODUCTION
The Flash circuitry contains one array divided in
two main parts that can each be read independ-
ently. The first part contains the main Flash array
for code storage, a reserved array (TestFlash) for
system routines and a 128-byte area available as
one time programmable memory (OTP). The sec-
ond part contains the two dedicated Flash sectors
used for EEPROM Hardware Emulation.
The write operations of the two parts are managed
by an embedded Program/Erase Controller.
Through a dedicated RAM buffer the Flash and the
E3 TM can be written in blocks of 16 bytes.
Figure 30. Flash Memory Structure (Example for 64K Flash device)
sense amplifiers
230000h
231F80h
000000h
002000h
004000h
010000h
TestFlash
8 Kbytes
User OTP and Protection registers
Sector F0
8 Kbytes
Sector F1
8 Kbytes
Sector F2
48 Kbytes
Address
Data
Register
Interface
RAM buffer
16 bytes
Program / Erase
Controller
22CFFFh
228000h
2203FFh
220000h
Hardware emulated EEPROM sectors
8 Kbytes (Reserved)
Emulated EEPROM
1 Kbyte
sense amplifiers
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