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LIS3DSH View Datasheet(PDF) - STMicroelectronics

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LIS3DSH Datasheet PDF : 53 Pages
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Mechanical and electrical specifications
LIS3DSH
When an acceleration is applied to the sensor the proof mass displaces from its nominal
position, causing an imbalance in the capacitive half bridge. This imbalance is measured
using charge integration in response to a voltage pulse applied to the capacitor.
At steady-state the nominal value of the capacitors are a few pF and when an acceleration is
applied, the maximum variation of the capacitive load is in the fF range.
3.8
IC interface
The complete measurement chain is made up of a low-noise capacitive amplifier which
converts the capacitive unbalancing of the MEMS sensor into an analog voltage that is
finally available to the user through an analog-to-digital converter.
The acceleration data may be accessed through an I2C/SPI interface, therefore making the
device particularly suitable for direct interfacing with a microcontroller.
The LIS3DSH features a Data-Ready signal (RDY) which indicates when a new set of
measured acceleration data is available, therefore simplifying data synchronization in the
digital system that uses the device.
3.9
Factory calibration
The IC interface is factory calibrated for sensitivity (So) and Zero-g level (TyOff).
The trimming values are stored inside the device in a non volatile memory. Any time the
device is turned on, the trimming parameters are downloaded into the registers to be used
during the active operation. This allows to use the device without further calibration.
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Doc ID 022405 Rev 1
 

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