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E-LIS3L02AS4TR View Datasheet(PDF) - STMicroelectronics

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E-LIS3L02AS4TR Datasheet PDF : 0 Pages
LIS3L02AS4
Table 3. Mechanical Characteristics1
(Temperature range -40°C to +85°C). All the parameters are specified @ Vdd =3.3V, T=25°C unless oth-
erwise noted
Symbol
Parameter
Test Condition
Min.
Typ.2
Max.
Unit
Ar Acceleration Range3 FS pin connected to GND
±1.8
±2.0
g
FS pin connected to Vdd
±5.4
±6.0
g
So Sensitivity4
Full-scale = 2g
Full-scale = 6g
Vdd/5–10%
Vdd/5
Vdd/5+10% V/g
Vdd/15–10% Vdd/15 Vdd/15+10% V/g
SoDr Sensitivity Change Vs Delta from +25°C
Temperature
±0.01
%/°C
Voff Zero-g Level4
T = 25°C
Vdd/2-10%
Vdd/2
Vdd/2+10%
V
OffDr Zero-g level Change Delta from +25°C
Vs Temperature
±1.1
mg/°C
NL Non Linearity5
Best fit straight line
Full-scale = 2g
X, Y axis
±0.3
±1.5
% FS
Best fit straight line;
Full-scale = 2g
Z axis
±0.6
±2
% FS
CrossAx Cross-Axis6
±2
±4
%
An Acceleration Noise Vdd=3.3V;
Density
Full-scale = 2g
50
µg/ Hz
Vt Self test Output
T = 25°C
Voltage Change7,8,9 Vdd=3.3V
Full-scale = 2g
X axis
-20
-50
-100
mV
T = 25°C
Vdd=3.3V
Full-scale = 2g
Y axis
20
50
100
mV
T = 25°C
Vdd=3.3V
Full-scale = 2g
Z axis
20
50
100
mV
Fres Sensing Element
all axes
1.5
KHz
Resonance
Frequency10
Top Operating
Temperature Range
-40
+85
°C
Wh Product Weight
0.6
gram
Notes: 1. The product is factory calibrated at 3.3V. The device can be powered from 2.4V to 3.6V. Voff, So and Vt parameters will vary with
supply voltage.
2. Typical specifications are not guaranteed
3. Verified by wafer level test and measurement of initial offset and sensitivity
4. Zero-g level and sensitivity are essentially ratiometric to supply voltage
5. Guaranteed by design
6. Contribution to the measuring output of an inclination/acceleration along any perpendicular axis
7. “Self test output voltage change” is defined as Vout(Vst=Logic1)-Vout(Vst=Logic0)
8. “Self test output voltage change” varies cubically with supply voltage
9. When full-scale is set to ±6g, “self-test output voltage change” is one third of the specified value.
10.Minimum resonance frequency Fres=1.5KHz. Sensor bandwidth=1/(2*π*110K*Cload) with Cload>1nF.
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