KSD5070 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

View to exact match

KSD5070

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

KSD5070

DESCRIPTION

·High Breakdown Voltage-

: VCBO= 1500V (Min)

·High Switching Speed

·High Reliability

·Built-in Damper Diode

APPLICATIONS

·Designed for color TV horizontal output applicaitions

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

1500

V

VCEO

Collector-Emitter Voltage

800

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current- Continuous

2.5

A

ICP

Collector Current-Peak

Collector Power Dissipation

PC

@ TC=25℃

TJ

Junction Temperature

10

A

50

W

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc Website：www.iscsemi.cn

Share Link: