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KSD882RSTU View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
KSD882RSTU NPN Epitaxial Silicon Transistor Fairchild
Fairchild Semiconductor Fairchild
KSD882RSTU Datasheet PDF : 5 Pages
1 2 3 4 5
Typical Characteristics
2.0
1.6
IB = 10mA
IB = 9mA
IB = 8mA
1.2
IB = 7mA
IB = 6mA
IB = 5mA
0.8
IB = 4mA
IB = 3mA
0.4
IB = 2mA
0.0
IB = 1mA
0
4
8
12
16
20
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
1000
100
VCE = 2V
10
1E-3
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 2. DC current Gain
10
1
VBE(sat)
0.1
VCE(sat)
0.01
IC = 10 IB
1E-3
1E-3
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
100
VCE = 5V
10
1
0.01
0.1
1
IC[A], COLLECTOR CURRENT
Figure 4. Current Gain Bandwidth Product
1000
IE=0
f=1MHz
10
1
ICMAX. (pulse)
IC MAX. (DC)
10ms
Dissipation
1ms
Limited
100µs
100
S/b Limited
0.1
10
1
10
100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
© 2007 Fairchild Semiconductor Corporation
KSD882 Rev. B
3
0.01
1
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 6. Safe Operating Area
www.fairchildsemi.com
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