KSD882R View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
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KSD882R Datasheet PDF : 5 Pages
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KSD882
NPN Epitaxial Silicon Transistor
Recommended Applications
• Audio Frequency Power Amplifier
Featuers
• Low Speed Switcing
• Complement to KSB772.
November 2007
1
TO-126
1. Emitter 2.Collector 3.Base
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
Symbol
Parameter
BVCBO
Collector-Base Voltage
BVCEO
Collector-Emitter Voltage
BVEBO
Emitter-Base Voltage
IC
Collector Current(DC)
IC
Collector Current(Pulse)**
IB
Base Current
PD
Total Device Dissipation(TC=25°C)
Total Device Dissipation(Ta=25°C)
TJ, TSTG
Junction and Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
** PW≤10ms, Duty Cycle≤50%
Electrical Characteristics. Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
© 2007 Fairchild Semiconductor Corporation
KSD882 Rev. B
IC=500uA, IE=0
IC=5mA, IB=0
IE=500uA, IC=0
VCB = 30V, IE = 0
VEB = 3V, IC = 0
VCE = 2V, IC = 20mA
VCE = 2V, IC = 1A
IC = 2A, IB = 0.2A
IC = 2A, IB = 0.2A
VCE = 5V, IE = 0.1A
VCB = 10V, IE = 0
f = 1MHz
1
Ratings
40
30
5
3
7
0.6
10
1
- 55 ~ +150
Units
V
V
V
A
A
A
W
W
°C
Min.
40
30
5
30
60
Typ.
150
160
0.3
1.0
90
45
Max.
1
1
400
0.5
2.0
Units
V
V
V
µA
µA
V
V
MHz
pF
www.fairchildsemi.com
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