KSD73O View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
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KSD73O Datasheet PDF : 4 Pages
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KSD73
Low Frequency High Power Amplifier
• Collector-Base Voltage : VCBO = 100V
• Collector Current : IC = 5A
• Collector Dissipation : PC = 30W (TC=25°C)
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
hFE
VCE(sat)
VBE(sat)
fT
VBE(on)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Base-Emitter ON Voltage
IC = 1mA, IE = 0
IC = 20mA, IB = 0
IE = 1mA, IC = 0
VCB = 100V, IE = 0
VCE = 10V, IC = 1.0A
IC = 5A, IB = 0.5A
IC = 5A, IB = 0.5A
VCE = 10V, IC = 0.3A
VCE = 10V, IE = 1.0A
hFE Classification
Classification
hFE
O
70 ~ 140
Value
100
60
5
5
30
150
- 55 ~ 150
Units
V
V
V
A
W
°C
°C
Min.
100
60
5
70
Typ.
20
0.75
Max.
5
240
2.0
1.5
Units
V
V
V
mA
V
V
MHz
V
Y
120 ~ 240
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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