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KSD261CGBU View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
KSD261CGBU NPN Epitaxial Silicon Transistor Fairchild
Fairchild Semiconductor Fairchild
KSD261CGBU Datasheet PDF : 4 Pages
1 2 3 4
Typical Characteristics
500
450
IB = 2.0mA
400
IB = 1.8mA
350
IB = 1.6mA
300
IB = 1.4mA
250
IB = 1.2mA
IB = 1.0mA
200
IB = 0.8mA
150
IB = 0.6mA
100
IB = 0.4mA
50
IB = 0.2mA
0
0
1
2
3
4
5
6
7
8
9
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
10
IC = 10 IB
1
VBE(sat)
0.1
VCE(sat)
0.01
1
10
100
1000
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
IE = 0
f = 1MHz
10
1000
100
VCE = 1V
10
1
10
100
1000
IC[mA], COLLECTOR CURRENT
Figure 2. DC current Gain
100
VCE = 1V
10
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VBE[V], BASE-EMITTER VOLTAGE
Figure 4. Base-Emitter On Voltage
1
1
10
100
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
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