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KSD261G View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
KSD261G
Fairchild
Fairchild Semiconductor Fairchild
KSD261G Datasheet PDF : 4 Pages
1 2 3 4
KSD261
Low Frequency Power Amplifier
• Complement to KSA643
• Collector Power Dissipation : PC=500mW
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Ratings
40
20
5
500
500
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE (sat)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
IC=100µA, IE=0
IC=10mA, IB=0
IE=100µA, IC=0
VCB=25V, IE=0
VEB=3V, IC=0
VCE=1V, IC=0.1A
IC=0.5A, IB=50mA
Min.
40
20
5
40
Typ.
0.18
Max.
0.1
0.1
400
0.4
Units
V
V
V
µA
µA
V
hFE Classification
Classification
hFE
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
G
200 ~ 400
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
 

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