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KSD1692 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
KSD1692
Fairchild
Fairchild Semiconductor Fairchild
KSD1692 Datasheet PDF : 4 Pages
1 2 3 4
KSD1692
Feature
• High Dc Durrent Gain
• Low Collector Saturation Voltage
• Built-in a Damper Diode at E-C
• High Power Dissipation : PC = 1.3W (Ta=25°C)
1
TO-126
1. Emitter 2.Collector 3.Base
NPN Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Sym-
bol
Parameter
Value
Units
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current (DC)
ICP
*Collector Current (Pulse)
PC
Collector Dissipation (Ta=25°C)
PC
Collector Dissipation (TC=25°C)
TJ
Junction Temperature
TSTG Storage Temperature
* PW10ms, duty Cycle50%
150
V
100
V
8
V
3
A
5
A
1.3
A
15
W
150
W
- 55 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE1
hFE2
*DC Current Gain
VCE(sat) *Collector-Emitter Saturation Voltage
VBE(sat) *Base-Emitter Saturation Voltage
tON
Turn ON Time
tSTG
Storage Time
tF
Fall Time
* Pulse test: PW350µs, duty Cycle2% Pulsed
VCB = 100V, IE = 0
VEB = 5V, IC = 0
VCE = 2V, IC = 1.5A
VCE = 2V, IC = 3A
IC = 1.5A, IB = 1.5mA
IC = 1.5A, IB = 1.5mA
VCC = 40V, IC = 1.5A
IB1 = - IB2 = 1.5mA
RL = 27
Min.
2K
1K
Typ.
0.9
1.5
0.5
2
1
Max.
10
2
20K
1.2
2
Units
µA
mA
V
V
µs
µs
µs
hFE Classificntion
Classification
hFE1
O
2000 ~ 5000
Y
4000 ~ 12000
G
6000 ~ 20000
©2000 Fairchild Semiconductor International
Rev. A, February 2000
 

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