KSB772R View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

View to exact match

KSB772R

PNP EPITAXIAL SILICON TRANSISTOR

Fairchild Semiconductor 

KSB772

Audio Frequency Power Amplifier

• Low Speed Switching

• Complement to KSD882

1

TO-126

1. Emitter 2.Collector 3.Base

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Symbol

Parameter

VCBO

Collector-Base Voltage

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current (DC)

ICP

*Collector Current (Pulse)

IB

Base Current (DC)

PC

Collector Dissipation (TC=25°C)

Collector Dissipation (Ta=25°C)

Rθja

Junction to Ambient

Rθjc

Junction to Case

TJ

Junction Temperature

TSTG

Storage Temperature

* PW≤10ms, Duty Cycle≤50%

Value

- 40

- 30

-5

-3

-7

- 0.6

10

1

132

13.5

150

- 55 ~ 150

Electrical Characteristics TC=25°C unless otherwise noted

Symbol

Parameter

Test Condition

ICBO

IEBO

hFE1

hFE2

VCE(sat)

VBE(sat)

fT

Cob

Collector Cut-off Current

Emitter Cut-off Current

* DC Current Gain

* Collector-Emitter Saturation Voltage

* Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

* Pulse Test: PW≤350µs, Duty Cycle≤2%

VCB = - 30V, IE = 0

VEB = - 3V, IC = 0

VCE = - 2V, IC = - 20mA

VCE = - 2V, IC = - 1A

IC = - 2A, IB = - 0.2A

IC = - 2A, IB = - 0.2A

VCE = - 5V, IE = - 0.1A

VCB = - 10V, IE = 0

f = 1MHz

Min.

30

60

Typ.

220

160

- 0.3

- 1.0

80

55

hFE Classificntion

Classification

hFE2

R

60 ~ 120

O

100 ~ 200

Y

160 ~ 320

Units

V

V

V

A

A

A

W

W

°C/W

°C/W

°C

°C

Max.

-1

-1

Units

µA

µA

400

- 0.5

- 2.0

V

V

MHz

pF

G

200 ~ 400

©2002 Fairchild Semiconductor Corporation

Rev. B, October 2002

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