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KSB564AGTA View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
KSB564AGTA PNP Epitaxial Silicon Transistor Fairchild
Fairchild Semiconductor Fairchild
KSB564AGTA Datasheet PDF : 4 Pages
1 2 3 4
KSB564A
Audio Frequency Power Amplifier
• Complement to KSD471A
• Collector Current : IC = -1A
• Collector Power Dissipation : PC = 800mW
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
1
TO-92
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Ratings
-30
-25
-5
-1.0
800
150
-55 ~ 150
Units
V
V
V
A
mW
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
hFE
VCE (sat)
VBE (sat)
fT
Cob
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
IC= -100µA, IE=0
IC= -10mA, IB=0
IE= -100µA, IC=0
VCB= -30V, IE=0
VCE= -1V, IC= -100mA
IC= -1A, IB= -0.1A
IC= -1A, IB= -0.1A
VCE= -6V, IC= -10mA
VCB= -6V, IE=0, f=1MHz
Min.
-30
-25
-5
70
Typ.
110
18
Max.
-0.1
400
-0.5
-1.2
Units
V
V
V
µA
V
V
MHz
pF
hFE Classification
Classification
hFE
O
70 ~ 140
Y
120 ~ 240
G
200 ~ 400
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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