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KM416C1004C-45 View Datasheet(PDF) - Samsung

Part NameDescriptionManufacturer
KM416C1004C-45 1M x 16Bit CMOS Dynamic RAM with Extended Data Out Samsung
Samsung Samsung
KM416C1004C-45 Datasheet PDF : 35 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
KM416C1004C, KM416C1204C
KM416V1004C, KM416V1204C
CMOS DRAM
AC CHARACTERISTICS (Continued)
Parameter
Data set-up time
Data hold time
Refresh period (1K, Normal)
Refresh period (4K, Normal)
Refresh period (L-ver)
Write command set-up time
CAS to W delay time
RAS to W delay time
Column address W delay time
CAS precharge to W delay time
CAS set-up time (CAS -before-RAS refresh)
CAS hold time (CAS -before-RAS refresh)
RAS to CAS precharge time
Access time from CAS precharge
Hyper Page mode cycle time
Hyper Page read-modify-write cycle time
CAS precharge time (Hyper Page cycle)
RAS pulse width (Hyper Page cycle)
RAS hold time from CAS precharge
OE access time
OE to data delay
Output buffer turn off delay time from OE
OE command hold time
Output data hold time
Output buffer turn off delay from RAS
Output buffer turn off delay from W
W to data delay
OE to CAS hold time
CAS hold time to OE
OE precharge time
W pulse width (Hyper Page Cycle)
RAS pulse width (C-B-R self refresh)
RAS precharge time (C-B-R self refresh)
CAS hold time (C-B-R self refresh)
Symbol
tDS
tDH
tREF
tREF
tREF
tWCS
tCWD
tRWD
tAWD
tCPWD
tCSR
tCHR
tRPC
tCPA
tHPC
tHPRWC
tCP
tRASP
tRHCP
tOEA
tOED
tOEZ
tOEH
tDOH
tREZ
tWEZ
tWED
tOCH
tCHO
tOEP
tWPE
tRASS
tRPS
tCHS
-45
Min Max
0
7
16
64
128
0
28
59
37
39
5
10
5
25
18
39
7
45 200K
27
13
10
3
13
10
4
3
13
3
13
15
5
5
5
5
100
79
-50
-5
Min Max
0
8
16
64
128
0
32
67
42
47
5
10
5
28
20
47
8
50 200K
30
13
13
3
13
13
5
3
13
3
13
15
5
5
5
5
100
90
-50
-6
Min Max
0
10
16
64
128
0
36
79
49
54
5
10
5
35
25
56
10
60 200K
35
15
15
3
15
15
5
3
15
3
15
15
5
5
5
5
100
110
-50
Units
ns
ns
ms
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
ns
ns
Notes
9,17
9,17
7
7,13
7
7
7
15
16
3
18
18
12
3
6
6,19
6
20,21,22
20,21,22
20,21,22
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