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KM416V1004CT View Datasheet(PDF) - Samsung

Part Name
Description
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KM416V1004CT Datasheet PDF : 35 Pages
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KM416C1004C, KM416C1204C
KM416V1004C, KM416V1204C
CAPACITANCE (TA=25°C, VCC=5V or 3.3V, f=1MHz)
Parameter
Symbol
Min
Input capacitance [A0 ~ A11]
CIN1
-
Input capacitance [RAS, UCAS, LCAS, W, OE]
CIN2
-
Output capacitance [DQ0 - DQ15]
CDQ
-
CMOS DRAM
Max
5
7
7
Units
pF
pF
pF
AC CHARACTERISTICS (0°CTA70°C, See note 1,2)
Test condition (5V device) : VCC=5.0V±10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.0/0.8V
Test condition (3.3V device) : VCC=3.3V±0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V
Parameter
Symbol
-45
Min Max
-5
Min Max
Random read or write cycle time
Read-modify-write cycle time
Access time from RAS
Access time from CAS
Access time from column address
CAS to output in Low-Z
Output buffer turn-off delay from CAS
OE to output in Low-Z
Transition time (rise and fall)
RAS precharge time
RAS pulse width
RAS hold time
CAS hold time
tRC
tRWC
tRAC
tCAC
tAA
tCLZ
tCEZ
tOLZ
tT
tRP
tRAS
tRSH
tCSH
79
84
105
115
45
50
14
15
23
25
3
3
3
13
3
13
3
3
2
50
2
50
30
30
45 10K 50 10K
13
13
36
40
CAS pulse width
RAS to CAS delay time
RAS to column address delay time
CAS to RAS precharge time
Row address set-up time
Row address hold time
Column address set-up time
Column address hold time
Column address to RAS lead time
Read command set-up time
Read command hold time referenced to CAS
Read command hold time referenced to RAS
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
tCAS
tRCD
tRAD
tCRP
tASR
tRAH
tASC
tCAH
tRAL
tRCS
tRCH
tRRH
tWCH
tWP
tRWL
tCWL
7
10K
8
10K
19
31
20
35
14
22
15
25
5
5
0
0
9
10
0
0
7
8
23
25
0
0
0
0
0
0
8
10
8
10
10
13
7
8
-6
Min Max
104
140
60
17
30
3
3
15
3
2
50
40
60
10K
17
50
10
10K
20
43
15
30
5
0
10
0
10
30
0
0
0
10
10
15
10
Units Notes
ns
ns
ns 3,4,10
ns 3,4,5
ns
3,10
ns
3
ns
6,19
ns
3
ns
2
ns
ns
ns
ns
ns
18
ns
4
ns
10
ns
ns
ns
ns
11
ns
11
ns
ns
ns
8
ns
8
ns
ns
ns
ns
14
 

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