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KM416C1004CT View Datasheet(PDF) - Samsung

Part NameDescriptionManufacturer
KM416C1004CT 1M x 16Bit CMOS Dynamic RAM with Extended Data Out Samsung
Samsung Samsung
KM416C1004CT Datasheet PDF : 35 Pages
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KM416C1004C, KM416C1204C
KM416V1004C, KM416V1204C
CMOS DRAM
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Rating
3.3V
5V
Units
Voltage on any pin relative to VSS
VIN,VOUT
-0.5 to +4.6
-1.0 to +7.0
V
Voltage on VCC supply relative to VSS
VCC
-0.5 to +4.6
-1.0 to +7.0
V
Storage Temperature
Tstg
-55 to +150
-55 to +150
°C
Power Dissipation
PD
1
1
W
Short Circuit Output Current
IOS
50
50
mA
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted
to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS (Voltage referenced to Vss, TA= 0 to 70°C)
Parameter
3.3V
5V
Symbol
Min
Typ
Max
Min
Typ
Max
Supply Voltage
VCC
3.0
3.3
3.6
4.5
5.0
5.5
Ground
VSS
0
0
0
0
0
0
Input High Voltage
VIH
2.0
-
VCC+0.3*1
Input Low Voltage
VIL
-0.3*2
-
0.8
*1 : VCC+1.3V/15ns(3.3V), VCC+2.0V/20ns(5V), Pulse width is measured at VCC
*2 : -1.3V/15ns(3.3V), -2.0V/20ns(5V), Pulse width is measured at VSS
2.4
-1.0*2
-
VCC+1.0*1
-
0.8
Units
V
V
V
V
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted.)
Max
Parameter
Symbol
Min
Input Leakage Current (Any input 0VINVIN+0.3V,
all other input pins not under test=0 Volt)
II(L)
-5
Max
Units
5
uA
3.3V
Output Leakage Current
(Data out is disabled, 0VVOUTVCC)
IO(L)
-5
5
uA
Output High Voltage Level(IOH=-2mA)
VOH
2.4
-
V
Output Low Voltage Level(IOL=2mA)
VOL
-
0.4
V
Input Leakage Current (Any input 0VINVIN+0.5V,
all other input pins not under test=0 Volt)
II(L)
-5
5
uA
Output Leakage Current
5V
(Data out is disabled, 0VVOUTVCC)
IO(L)
-5
5
uA
Output High Voltage Level(IOH=-5mA)
Output Low Voltage Level(IOL=4.2mA)
VOH
2.4
-
V
VOL
-
0.4
V
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