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KM416C1004C-L45 View Datasheet(PDF) - Samsung

Part NameDescriptionManufacturer
KM416C1004C-L45 1M x 16Bit CMOS Dynamic RAM with Extended Data Out Samsung
Samsung Samsung
KM416C1004C-L45 Datasheet PDF : 35 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
KM416C1004C, KM416C1204C
KM416V1004C, KM416V1204C
CMOS DRAM
DC AND OPERATING CHARACTERISTICS (Continued)
Symbol
Power
ICC1
Dont care
Speed
-45
-5
-6
KM416V1004C
100
90
80
Max
KM416V1204C KM416C1004C
150
100
140
90
130
80
ICC2
Normal
L
Dont care
1
1
1
1
2
1
-45
100
150
100
ICC3
Dont care
-5
90
140
90
-6
80
130
80
-45
110
110
110
ICC4
Dont care
-5
100
100
100
-6
90
90
90
ICC5
Normal
L
Dont care
0.5
200
0.5
200
1
200
-45
100
150
110
ICC6
Dont care
-5
90
140
90
-6
80
130
80
ICC7
L
Dont care
300
200
350
ICCS
L
Dont care
150
150
200
ICC1* : Operating Current (RAS and UCAS, LCAS, Address cycling @tRC=min.)
ICC2 : Standby Current (RAS=UCAS=LCAS=W=VIH)
ICC3* : RAS-only Refresh Current (UCAS=LCAS=VIH, RAS, Address cycling @tRC=min.)
ICC4* : Hyper Page Mode Current (RAS=VIL, UCAS or LCAS, Address cycling @tHPC=min.)
ICC5 : Standby Current (RAS=UCAS=LCAS=W=VCC-0.2V)
ICC6* : CAS-Before-RAS Refresh Current (RAS, UCAS or LCAS cycling @tRC=min.)
ICC7 : Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, UCAS, LCAS=0.2V,
DQ=Dont care, TRC=31.25us(4K/L-ver), 125us(1K/L-ver)
TRAS=TRASmin~300ns
ICCS : Self Refresh Current
RAS=UCAS=LCAS=VIL, W=OE=A0 ~ A11=VCC-0.2V or 0.2V,
DQ0 ~ DQ15=VCC-0.2V, 0.2V or Open
KM416C1204C
150
140
130
2
1
150
140
130
110
100
90
1
200
150
140
130
250
200
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
mA
mA
mA
uA
uA
*Note : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one Hyper page mode cycle time, tHPC.
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