¡ electronic components
KGF1323F
ABSOLUTE MAXIMUM RATINGS
Item
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
Symbol
VDS
VGS
IDS
Ptot
Tch
Tstg
Condition
Ta = 25°C
Ta = 25°C
Ta = 25°C
Ta = Tc = 25°C
—
—
Unit
Min.
V
—
V
–6.0
A
—
W
—
°C
—
°C
–45
Max.
10
0.4
3.0
5.0
150
125
ELECTRICAL CHARACTERISTICS
Item
Gate-source leakage current
Gate-drain Breakdown Voltage
Drain-source cut-off current
Drain current
Gate bias Q point
Output power
Drain efficiency
Drain efficiency 2
Thermal resistance
Symbol
IGSS
VGDO
IDS(off)
IDSS
VGSQ
PO
hD
hD2
Rth
Condition
VGS = –6 V
VGD = –1.5 mA
VDS = 10 V, VGS = –6 V
VDS = 1.5 V, VGS = 0 V
VDS = 5.8 V, IDSQ = 175 mA
(*1)
(*1)
(*2)
Channel to case
Unit
mA
V
mA
A
V
dBm
%
%
°C/W
Min.
—
22
—
2.0
–3.35
31.5
70
47
—
*1 Condition: VDS = 5.8 V, IDSQ = 175 mA, PIN = 20 dBm, f = 850 MHz
*2 Condition: VDS = 5.8 V, IDSQ = 175 mA, PO = 29 dBm, f = 850 MHz
(Ta = 25°C)
Typ. Max.
—
10
—
—
—
1.5
—
—
— –2.45
—
—
—
—
—
—
14
—
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