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KF10N60FR View Datasheet(PDF) - KEC

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KF10N60FR Datasheet PDF : 0 Pages
KF10N60PR/FR
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
BVDSS
ID=250 A, VGS=0V
BVDSS/ Tj ID=250 A, Referenced to 25
IDSS
VDS=600V, VGS=0V
Vth
VDS=VGS, ID=250 A
IGSS
VGS= 30V, VDS=0V
RDS(ON)
VGS=10V, ID=5A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS=480V, ID=10A
VGS=10V
(Note4,5)
VDD=300V
ID=10A
RG=25
(Note4,5)
VDS=25V, VGS=0V, f=1.0MHz
Continuous Source Current
Pulsed Source Current
IS
VGS<Vth
ISP
Diode Forward Voltage
VSD
IS=10A, VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IS=10A, VGS=0V,
Qrr
dIs/dt=100A/ s
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =7.3mH, IS=10A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 10A, dI/dt 200A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
Marking
MIN. TYP. MAX. UNIT
600
-
-
V
-
0.6
- V/
-
-
10
A
2
-
4
V
-
-
100 nA
- 0.59 0.69
-
29.5
-
-
6.5
-
nC
-
12.5
-
-
32
-
-
35
-
ns
-
88
-
-
30.5
-
- 1255 -
-
160
-
pF
-
16.5
-
-
-
10
A
-
-
40
-
-
1.4
V
-
150
-
ns
-
1.0
-
C
1
1
KF10N60
KF10N60
FR 813
2
PR 801
2
1 PRODUCT NAME
2 LOT NO
2008. 11. 12
Revision No : 0
2/7
 

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