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KF10N60PR View Datasheet(PDF) - KEC

Part Name
Description
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KF10N60PR Datasheet PDF : 0 Pages
SEMICONDUCTOR
TECHNICAL DATA
KF10N60PR/FR
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, fast reverse recovery time, low gate
charge and excellent avalanche characteristics. It is mainly suitable for
active power factor correction and switching mode power supplies.
FEATURES
VDSS=600V, ID=10A
Drain-Source ON Resistance :
RDS(ON)(Max)=0.69 @VGS=10V
Qg(typ.)= 29.5nC
trr(typ.)=150nS
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KF10N60PR KF10N60FR
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
600
V
30
V
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
ID
IDP
EAS
EAR
dv/dt
PD
10
10*
6
6*
25
25*
400
16.5
4.5
190
50
1.52
0.4
A
mJ
mJ
V/ns
W
W/
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
0.65
Thermal Resistance,
Junction-to-Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
2.5
/W
62.5
/W
PIN CONNECTION
(KF10N60PR, KF10N60FR)
D
KF10N60PR
A
E
I
O
C
F
G
B
Q
K
P
M
L
J
D
NN
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A
9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D
0.8 +_ 0.1
E
3.6 +_ 0.2
F
2.8 +_ 0.1
G
3.7
H 0.5+0.1/-0.05
I
1.5
J 13.08 +_ 0.3
K
1.46
L
1.4 +_ 0.1
M 1.27 +_ 0.1
N 2.54 +_ 0.2
O
4.5 +_ 0.2
P
2.4 +_ 0.2
Q
9.2 +_ 0.2
TO-220AB
KF10N60FR
A
C
E
L
M
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E
3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q
4.7 +_ 0.2
R 2.76 +_ 0.2
TO-220IS (1)
G
S
2008. 11. 12
Revision No : 0
1/7
 

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