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KF12BDT-TR Просмотр технического описания (PDF) - STMicroelectronics

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KF12BDT-TR VERY LOW DROP VOLTAGE REGULATORS WITH INHIBIT ST-Microelectronics
STMicroelectronics ST-Microelectronics
KF12BDT-TR Datasheet PDF : 17 Pages
First Prev 11 12 13 14 15 16 17
KF00
ELECTRICAL CHARACTERISTICS FOR KF85B (refer to the test circuits, Tj = 25°C, CI = 0.1 µF,
CO = 2.2 µF unless otherwise specified.)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
VO Output Voltage
IO = 50 mA, VI = 10.5 V
8.33 8.5 8.67
V
IO = 50 mA, VI = 10.5 V, Ta = -25 to 85°C 8.16
8.84
VI Operating Input Voltage
IO = 500 mA
20
V
IO Output Current Limit
1
A
VO Line Regulation
VI = 9.5 to 20 V, IO = 5 mA
4
24
mV
VO Load Regulation
VI = 9.8 V,
IO = 5 to 500 mA
2
50
mV
Id Quiescent Current
VI = 9.5 to 20V, IO = 0mA (ON MODE)
0.7
1.5
mA
VI = 9.8 to 20V, IO = 500mA
12
VI = 10 V
(OFF MODE)
70 140 µA
SVR Supply Voltage Rejection IO = 5 mA
f = 120 Hz
67
dB
VI = 10.5 ± 1 V
f = 1 KHz
63
f = 10 KHz
53
eN Output Noise Voltage
B = 10 Hz to 100 KHz
50
µV
Vd Dropout Voltage
IO = 200 mA
0.2 0.35
V
IO = 500 mA
0.4
0.7
VIL Control Input Logic Low
Ta = -40 to 125°C
0.8
V
VIH Control Input Logic High Ta = -40 to 125°C
2
V
II Control Input Current
VI = 10 V, VC = 6 V
10
µA
CO Output Bypass Capacitance ESR = 0.1 to 10
IO = 0 to 500 mA
2
10
µF
ELECTRICAL CHARACTERISTICS FOR KF120B (refer to the test circuits, Tj = 25°C, CI = 0.1 µF,
CO = 2.2 µF unless otherwise specified.)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
VO Output Voltage
IO = 50 mA, VI = 14 V
11.76 12 12.24 V
IO = 50 mA, VI = 14 V, Ta = -25 to 85°C
11.52
12.48
VI Operating Input Voltage
IO = 500 mA
20
V
IO Output Current Limit
1
A
VO Line Regulation
VI = 13 to 20 V, IO = 5 mA
8
48
mV
VO Load Regulation
VI = 13.3 V,
IO = 5 to 500 mA
2
50
mV
Id Quiescent Current
VI = 13 to 20V, IO = 0mA (ON MODE)
0.7
1.5
mA
VI = 13.3 to 20V,IO = 500mA
12
VI = 13 V
(OFF MODE)
70 140 µA
SVR Supply Voltage Rejection
IO = 5 mA
VI = 14 ± 1 V
f = 120 Hz
f = 1 KHz
69
dB
64
f = 10 KHz
54
eN Output Noise Voltage
B = 10 Hz to 100 KHz
50
µV
Vd Dropout Voltage
IO = 200 mA
0.2 0.35
V
IO = 500 mA
0.4
0.7
VIL Control Input Logic Low
Ta = -40 to 125°C
0.8
V
VIH Control Input Logic High Ta = -40 to 125°C
2
V
II Control Input Current
VI = 13 V, VC = 6 V
10
µA
CO Output Bypass Capacitance ESR = 0.1 to 10
IO = 0 to 500 mA
2
10
µF
11/17
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