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KDR729 View Datasheet(PDF) - KEC

Part Name
Description
View to exact match
KDR729 Datasheet PDF : 0 Pages
SEMICONDUCTOR
TECHNICAL DATA
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES
Low Forward Voltage : VF(4)=0.43V(Typ.)
IO=200mA rectification possible.
Small Package : USC.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10ms)
Power Dissipation
Junction Temperature
VRM
VR
IFM
IO
IFSM
PD
Tj
30
30
300
200
1
200*
125
Storage Temperature Range
Tstg
-55 125
* : Mounted on a glass epoxy circuit board of 20 20mm,
pad dimension of 4 4mm.
UNIT
V
V
mA
mA
A
mW
KDR729
SCHOTTKY BARRIER TYPE DIODE
B
G
1
H
2
D
M
M
1. ANODE
2. CATHODE
J
C
I
DIM MILLIMETERS
A
2.50 +_ 0.1
B
1.25+_ 0.05
C
0.90 +_0.05
D 0.30+0.06/-0.04
E
1.70 +_ 0.05
F
MIN 0.17
G
0.126 +_ 0.03
H
0~0.1
I
1.0 MAX
J
0.15 +_0.05
K
0.4 +_0.05
L
2 +4/-2
M
4~6
USC
Marking
Type Name
UM
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Current
VF(1)
VF(2)
VF(3)
VF(4)
IR
Total Capacitance
CT
TEST CONDITION
IF=1mA
IF=10mA
IF=100mA
IF=200mA
VR=30V
VR=0V, f=1MHz
MIN.
-
-
-
-
-
-
TYP.
0.22
0.29
0.38
0.43
-
50
MAX.
-
-
-
0.55
50
-
UNIT
V
A
pF
2003. 2. 25
Revision No : 4
1/2
 

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