KD103BW View Datasheet(PDF) - TY Semiconductor

Part Name

Description

View to exact match

KD103BW

Schottky Barrier Switching Diodes

TY Semiconductor 

Features

Low forward voltage drop.

Guard ring construction for transient protection.

Negligible reverse recovery time.

Product specification

KD103AW - KD103CW

(SD103AW-SD103CW)

SOD-123

2.7+0.1

-0.1

Unit: mm

1.1+0.05

-0.05

3.7+0.1

-0.1

0.50

0.35

0.1max

Absolute Maximum Ratings Ta = 25

Parameter

Peak repetitive peak reverse voltage

Working peak

DC blocking voltage

RMS reverse voltage

Forward continuous current

Non-Repetitive Peak Forward Surge Curren @t 1.0s

Power dissipation

Thermal resistance junction to ambient

Storage temperature

Symbol

VRRM

VRWM

VR

VR(RMS)

IFM

IFRM

Pd

RèJA

Tstg

KD103AW KD103BW KD103CW

40

30

20

28

21

14

350

1.5

400

300

-65 to +125

Unit

V

V

mA

A

mW

/W

Electrical Characteristics Ta = 25

Parameter

Reverse breakdown voltage

Forward Voltage Drop

Peak Reverse Current

Total Capacitance

Reverse Recovery Time

KD103AW

KD103BW

KD103CW

KD103AW

KD103BW

KD103CW

Symbol Testconditons

V (BR)R IR=100 A

IF = 20mA

VFM

IF = 200mA

VR = 30V

IRM VR = 20V

VR = 10V

CT VR = 0V, f = 1.0MHz

trr IF = IR = 200mA,Irr = 0.1 X IR, RL = 100

Min Typ Max Unit

40

30

V

20

0.37

V

0.60

5

A

50

pF

10

ns

Marking

NO.

Marking

KD103AW

S4

KD103BW

S5 or S4

KD103CW

S6 or S5 or S4

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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