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KA1M0680RB View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
KA1M0680RB
Fairchild
Fairchild Semiconductor Fairchild
KA1M0680RB Datasheet PDF : 12 Pages
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KA1M0680B/KA1M0680RB/KA1H0680B/KA1H0680RFB
Electrical Characteristics (SFET part)
(Ta=25°C unless otherwise specified)
Parameter
Symbol
Condition
Min. Typ. Max. Unit
Drain source breakdown voltage
BVDSS VGS=0V, ID=50µA
800 -
-
V
Zero gate voltage drain current
IDSS
Static drain source on resistance (note) RDS(ON)
Forward transconductance (note)
gfs
VDS=Max., Rating,
VGS=0V
VDS=0.8Max., Rating,
VGS=0V, TC=125°C
VGS=10V, ID=4.0A
VDS=15V, ID=4.0A
-
-
50 µA
-
- 200 µA
-
1.6 2.0
1.5 2.5
-
S
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VGS=0V, VDS=25V,
f=1MHz
- 1600 -
- 140 -
pF
-
42
-
Turn on delay time
Rise time
Turn off delay time
Fall time
td(on) VDD=0.5BVDSS, ID=6.0A
-
60
-
tr
td(off)
(MOSFET switching
time are essentially
independent of
- 150 -
nS
- 300 -
tf
operating temperature)
- 130 -
Total gate charge
(gate-source+gate-drain)
Gate source charge
Gate drain (Miller) charge
Qg
VGS=10V, ID=6.0A,
VDS=0.5BVDSS (MOSFET
-
70
-
Qgs
switching time are
-
16
-
nC
essentially independent of
Qgd operating temperature)
-
27
-
Note:
Pulse test: Pulse width 300µS, duty cycle 2%
S = -1--
R
3
 

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